re v f e ? ? ? ? ? o r m a b d g d d s r r p p j u s * l v . date: 09- f e atures bv dds =88 0 low gate c low drain- rohs co m halogen fr e r dering i n part nu m stk03 8 arking in b solute m d rain-source g ate-source v d rain current d rain current s ingle pulsed r epetitive av a r epetitive av a p ower dissip a p eak diode r e u nction tem p s torage temp l imited only m s 0 3 y w f eb- 11 swi t 0 v @t jmax c harge: q g = source on m pliant devi c e e packag e n formati o m be r 8 0d formatio n m aximu m charact e voltage v oltage (dc) * (pulsed) * avalanche e a lanche curr e a lanche ene r a tion e covery dv/d t p erature erature ran g m aximum jun c s t k 3 80 ww t chin g = 19nc (typ . resistance: c e e o n markin g stk03 8 n m ratings ( e ristic e nergy (note 2 ) e nt (note 1) r gy (note 1) t (note 3) g e c tion temperat u column 1, column 3: e.g.) yw w -. yww: k s g re g . ) r ds(on) =4. 2 g 8 0 ( t c =25 ? c unl e ) u re 2: device c o production i n w date code ( y s d-t6o029- 0 g ulat o 2 ? (max.) package to-252 e ss otherwis e sym v d s v g s i d t t c i d m e a i a r e a p d dv/ d t j t s t o de n formation y ear, week) 0 00 o r ap p e noted) bol s s s s t c =25 ? c c =100 ? c m s r r d d t j t g s a dvanc p lica t rat 8 0 ? 3 3 1. 8 1 2 2 0 3 7 7 0 4. 1 5 -55 ~ g s s tk0 ed n-ch p o t ion ing 0 0 3 0 3 8 3 2 0 0 3 7 0 5 5 0 ~ 150 to-252 d www .auk.c o 1 o 380 d we r mosf e unit v v a a a mj a mj w v/ns ? c ? c o .kr o f 8 d e t
rev. date: 09-feb- 11 ksd-t6o029-000 www .auk.co.kr 2 of 8 thermal characteristics characteristic symbol rating unit thermal resistance, junction to case r th(j-c) max. 1.78 ? c/w thermal resistance, junction to ambient r th(j-a) max. 110 electrical characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250ua, v gs =0 800 - - v gate threshold voltage v gs(th) i d =250ua, v ds =v gs 2 - 4 v drain-source cut-off current i dss v ds =800v, v gs =0v - - 10 ua v ds =640v, t c =125 ? c - - 100 ua gate leakage current i gss v ds =0v, v gs = ? 30v - - ? 100 na drain-source on-resistance r ds(on) v gs =10v, i d =1.5a - 3.36 4.2 ? forward transfer conductance (note 4) g fs v ds =30v, i d =1.5a - 3.7 - s input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 696 - pf output capacitance c oss - 65 - reverse transfer capacitance c rss - 10.2 - turn-on delay time (note 4,5) t d(on) v dd =400v, i d =3a r g =25 ? - 48 - ns rise time (note 4,5) t r - 36 - turn-off delay time (note 4,5) t d(off) - 106 - fall time (note 4,5) t f - 41 - total gate charge (note 4,5) q g v ds =640v, v gs =10v i d =3a - 19 - nc gate-source charge (note 4,5) q gs - 4 - gate-drain charge (note 4,5) q gd - 7.6 - source-drain diode ratings and characteristics (t c =25 ? c unless otherwise noted) characteristic symbol test condition min. typ. max. unit source current (dc) i s integral reverse diode in the mosfet - - 3 a source current (pulsed) i sm - - 12 a forward voltage v sd v gs =0v, i s =3a - - 1.5 v reverse recovery time (note 4,5) t rr i s =3a, v gs =0v di f /dt=100a/us - 372 - ns reverse recovery charge (note 4,5) q rr - 1.8 - uc note: 1. repeated rating: pulse width limited by safe operating area 2. l=42mh, i as =3a, v dd =50v, r g =25 ? , starting t j =25 ? c 3. i sd 3a, di/dt 200a/us, v dd bv dss , starting t j =25 ? c 4. pulse test: pulse width 300us, duty cycle 2% 5. essentially independent of operati ng temperature typical characteristics STK0380D
rev. date: 09-feb- 11 ksd-t6o029-000 www .auk.co.kr 3 of 8 electrical characteristic curves STK0380D fig. 1 i d - v ds fig. 2 i d ? v gs fig. 3 r ds(on) - i d fig. 4 i dr - v sd fig. 5 capacitance - v ds fig. 6 v gs - q g
rev. date: 09-feb- 11 ksd-t6o029-000 www .auk.co.kr 4 of 8 electrical characteristic curves (continue) fig. 7 bv dss - t j fig. 8 r ds(on) - t j fig. 9 i d - t c fig. 10 v gs(th) ? t j fig. 11 safe operating area fig. 12 z th(j-c) - t STK0380D
rev. date: 09-feb- 11 ksd-t6o029-000 www .auk.co.kr 5 of 8 fig. 13 gate charge test circuit & waveform fig. 14 resistive switching test circuit & waveform fig. 15 e as test circuit & waveform STK0380D
rev. date: 09-feb- 11 ksd-t6o029-000 www .auk.co.kr 6 of 8 fig. 16 diode reverse recovery time test circuit & waveform STK0380D
rev. date: 09-feb- 11 ksd-t6o029-000 www .auk.co.kr 7 of 8 recommended land pa ttern [unit: mm] package outline dimensions STK0380D 4.60 1.50 2 . 5 0 7 . 0 0 7.00
rev. date: 09-feb- 11 ksd-t6o029-000 www .auk.co.kr 8 of 8 the auk corp. products are intended for the use as components in general electronic equipment (office and communication e quipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice. STK0380D
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